APT40M35JVFR Datasheet, PDF (2/4 Pages) Advanced Power Technology – POWER MOS V FREDFET

DYNAMIC CHARACTERISTICS
Symbol Characteristic
C_iss Input Capacitance
C_oss
C_rss
Q_g
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Q_gs Gate-Source Charge
Q_gd Gate-Drain ("Miller ") Charge
t _d(on)
t_r
Turn-on Delay Time
Rise Time
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 200V
I_D = 93A @ 25°C
V_GS = 15V
V_DD = 200V
I_D = 93A @ 25°C
R_G = 0.6Ω
APT40M35JVFR
MIN TYP MAX UNIT
16800 20160
2400 3360 pF
1070 1605
710 1065
80
120 nC
340 510
20
40
30
60
ns
75 115
14
28
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I_S
I_SM
V_SD
dv_/dt
t_rr
Q_rr
I_RRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current ¹ (Body Diode)
Diode Forward Voltage ² (V_GS = 0V, I_S = - 93A)
Peak Diode Recovery ^dv/_dt ⁵
Reverse Recovery Time
(I_S = -93A, ^di/_dt = 100A/µs)
Reverse Recovery Charge
(I_S = -93A, ^di/_dt = 100A/µs)
Peak Recovery Current
(I_S = -93A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
MIN TYP MAX UNIT
93
Amps
372
1.3 Volts
15 V/ns
300
ns
600
2.2
µC
9
16
Amps
33
THERMAL/ PACKAGE CHARACTERISTICS
Symbol Characteristic
MIN
R_θJC
R_θJA
V_Isolation
Torque
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) 2500
Maximum Torque for Device Mounting Screws and Electrical Terminations.
TYP
MAX
0.18
40
10
UNIT
°C/W
Volts
lb•in
1 _{Repetitive Rating: Pulse width limited by maximum junction}
3 _{See MIL-STD-750 Method 3471}
temperature.
2 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
4 _{Starting Tj = +25°C, L = 0.83mH, RG = 25Ω, Peak IL = 93A}
5 _{IS ≤ ID = 93A,} di_{/dt = 100A/µs, Tj ≤ 150°C, RG = 2.0Ω VR = 400V.}
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.2
0.1
0.05
0.01
0.005
0.001
0.0005
10^-5
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION