APT40GT60BR Datasheet, PDF (2/2 Pages) Advanced Power Technology – The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.

DYNAMIC CHARACTERISTICS
APT40GT60BR
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
C_ies Input Capacitance
Capacitance
2200
C_oes
C_res
L Q_g
Q_ge
A _Qgc
IC ^td(on)
t_r
N _td(off)
H ^N _tf
C _IO ^td(on)
t_r
E _{T td(off)}
T _{A tf}
E ^Eon
IV ^{IC Eoff}
T ^{IF Ets}
t_d(on)
C ^{C tr}
E ^{E td(off)}
t_f
J ^P _Ets
OB ^{S gfe}
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
V_GE = 0V
220
V_CE = 25V
f = 1 MHz
130
Gate Charge
190
V_GE = 15V
80
V_CC = 0.5V_CES
I_C = I_C2
15
Resistive Switching (25°C)
10
V_GE = 15V
34
V_CC = 0.8V_CES
I_C = I_C2
115
R_G = 10Ω
125
25
Inductive Switching (150°C)
40
V_CLAMP(Peak) = 0.66V_CES
V_GE = 15V
I_C = I_C2
190
70
R_G = 10Ω
1.5
T_J = +150°C
0.9
2.4
Inductive Switching (25°C)
25
V_CLAMP(Peak) = 0.66V_CES
V_GE = 15V
I_C = I_C2
40
160
R_G = 10Ω
65
T_J = +25°C
1.8
V_CE = 20V, I_C = I_C2
4
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL CHARACTERISTICS
Symbol Characteristic
R_ΘJC
R_ΘJA
Torque
Junction to Case
Junction to Ambient
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
MIN TYP MAX UNIT
0.36
40
°C/W
10
lb•in
1 _{Repetitive Rating: Pulse width limited by maximum junction temperature.}
2 _{IC = IC2, VCC = 50V, RGE = 25Ω, L = 200µH, Tj = 25°C}
3 _{See MIL-STD-750 Method 3471}
APT Reserves the right to change, without notice, the specifications and information contained herein.