APT4030CNR Datasheet, PDF (2/4 Pages) Advanced Power Technology – N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

DYNAMIC CHARACTERISTICS
Symbol Characteristic
C_DC
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
f = 1 MHz
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
V_GS = 10V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
R_G = 1.80Ω
APT4030CNR
MIN TYP MAX UNIT
15
22
1500 1800
pF
385 540
160 240
71 105
8
12
nC
36
54
14
28
23
46
ns
43
64
15
30
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
I_S
Continuous Source Current (Body Diode)
I_SM
Pulsed Source Current ¹ (Body Diode)
V_SD
Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D [Cont.])
t _rr
Reverse Recovery Time (I_S = -I_D [Cont.], dl_S/dt = 100A/µs)
Q _{rr Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)}
MIN TYP MAX UNIT
15
Amps
60
1.3 Volts
284 568 ns
4.5
9.0
µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.80
50
1 _{Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)}
2 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
3 _{Starting Tj = +25°C, L = 7.11mH, RG = 25Ω, Peak IL = 15A}
APT Reserves the right to change, without notice, the specifications and information contained herein.
1.0
0.5
D=0.5
0.2
0.1
0.1
0.05
0.05
0.02
0.01
0.01
SINGLE PULSE
Note:
t1
0.005
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
0.001
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
UNIT
W/°C