APT33GF120HR Datasheet, PDF (2/2 Pages) Advanced Power Technology – The Fast IGBT is a new generation of high voltage power IGBTs

DYNAMIC CHARACTERISTICS
APT33GF120HR
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
C_ies
C_oes
C_res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance
V_GE = 0V
V_CE = 25V
f = 1 MHz
1850
200
pF
110
Q_g
Total Gate Charge ³
Q_ge Gate-Emitter Charge
Q_gc Gate-Collector ("Miller") Charge
Gate Charge
V_GE = 15V
V_CC = 0.5V_CES
I_C = I_C2
165
20
nC
100
t_d(on) Turn-on Delay Time
Resistive Switching (25°C)
30
t_r
t_d(off)
Rise Time
Turn-off Delay Time
V_GE = 15V
V_CC = 0.8V_CES
I_C = I_C2
140
ns
150
t_f
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
PRELIMINARY ^{Fall Time}
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
R_G = 10W
200
28
Inductive Switching (150°C)
60
V_CLAMP(Peak) = 0.66V_CES
280
V_GE = 15V
I_C = I_C2
30
R_G = 10W
3.0
T_J = +150°C
3.0
6.0
Inductive Switching (25°C)
28
V_CLAMP(Peak) = 0.66V_CES
70
V_GE = 15V
I_C = I_C2
250
ns
mJ
ns
t_f
Fall Time
R_G = 10W
25
E_ts
Total Switching Losses
T_J = +25°C
5.0
mJ
gfe Forward Transconductance
V_CE = 20V, I_C = I_C2
8.5
20
S
THERMAL CHARACTERISTICS
Symbol Characteristic
R_QJC
R_QJA
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.61
°C/W
40
1 _{Repetitive Rating: Pulse width limited by maximum junction temperature.}
2 _{IC = IC2, RGE = 25W, L = 119µH, Tj = 25°C}
3 _{See MIL-STD-750 Method 3471}
APT Reserves the right to change, without notice, the specifications and information contained herein.