APT32GU30B Datasheet, PDF (2/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

DYNAMIC CHARACTERISTICS
APT32GU30B
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
C_ies Input Capacitance
Capacitance
1660
C_oes Output Capacitance
V_GE = 0V, V_CE = 25V
170
pF
C_res Reverse Transfer Capacitance
f = 1 MHz
13
V_GEP Gate-to-Emitter Plateau Voltage
Gate Charge
7.0
V
Q_g
Total Gate Charge ³
Q_ge Gate-Emitter Charge
Q_gc Gate-Collector ("Miller ") Charge
V_GE = 15V
V_CE = 150V
I_C = 15A
57
11
nC
17
SSOA Switching Safe Operating Area
T_J = 150°C, R_G = 5Ω, V_GE = 120
A
15V, L = 100µH,V_CE = 300V
t_d(on) Turn-on Delay Time
Inductive Switching (25°C)
28
t_r
t_d(off)
t_f
E_on1
E_on2
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ⁴
Turn-on Switching Energy (Diode) ⁵
V_CC = 200V
V_GE = 15V
I_C = 15A
R_G = 20Ω
T_J = +25°C
13
ns
127
63
TBD
36
µJ
E_off Turn-off Switching Energy ⁶
66
t_d(on) Turn-on Delay Time
Inductive Switching (125°C)
28
t_r
t_d(off)
t_f
E_on1
E_on2
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ⁴
Turn-on Switching Energy (Diode) ⁵
V_CC = 200V
V_GE = 15V
I_C = 15A
R_G = 20Ω
T_J = +125°C
13
ns
155
119
TBD
76
µJ
E_off Turn-off Switching Energy ⁶
111
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_ΘJC
R_ΘJC
W_T
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
0.50
°C/W
N/A
5.90 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I_ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E_on1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E_on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E_on2 test circuit. (See Figures 21, 22.)
6 E_off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.