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| APT30M75BFLL Datasheet, PDF (2/4 Pages) Advanced Power Technology – POWER MOS 7 FREDFET | |||
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DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge 3
Qgs
Qgd
t d(on)
tr
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
t d(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 200V
ID = 44A @ 25°C
VGS = 15V
VDD = 200V
ID = 44A @ 25°C
RG = 0.6â¦
APT30M75 BFLL - SFLL
MIN TYP MAX UNIT
3018
771
pF
43
57
21
nC
23
13
3
ns
20
2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -44A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -44A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -44A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -44A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN TYP MAX UNIT
44
Amps
176
1.3 Volts
8
V/ns
200
ns
400
1.1
µC
2.7
10
Amps
15.1
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.38
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.34mH, RG = 25â¦, Peak IL = 44A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ⤠-ID44A di/dt ⤠700A/µs VR ⤠VDSS TJ ⤠150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.40
0.35
0.9
0.30
0.7
0.25
0.20
0.15
0.10
0.05
0
10-5
0.5
Note:
t1
0.3
t2
Duty Factor D = t1/t2
0.1
Peak TJ = PDM x ZθJC + TC
0.05
SINGLE PULSE
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
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