APT30M36JFLL Datasheet, PDF (2/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

DYNAMIC CHARACTERISTICS
APT30M36JFLL
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GS = 0V
V_DS = 25V
f = 1 MHz
6480
1540
pF
75
Q_g
Total Gate Charge ³
Q_{gs Gate-Source Charge}
Q_{gd Gate-Drain ("Miller") Charge}
V_GS = 10V
V_DD = 150V
I_D = 76A @ 25°C
115
35
nC
45
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
RESISTIVE SWITCHING
15
V_GS = 15V
V_DD = 150V
I_D = 76A @ 25°C
28
ns
29
R_G = 0.6Ω
5
INDUCTIVE SWITCHING @ 25°C
V_DD = 200V, V_GS = 15V
660
I_D = 76A, R_G = 5Ω
690
µJ
INDUCTIVE SWITCHING @ 125°C
V_DD = 200V, V_GS = 15V
770
I_D = 76A, R_G = 5Ω
740
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
I_S
Continuous Source Current (Body Diode)
I_{SM Pulsed Source Current} 1 _{(Body Diode)}
V_{SD Diode Forward Voltage} 2 _{(VGS = 0V, IS = -76A)}
dv_/dt
Peak Diode Recovery ^dv/_dt ⁵
t_rr
Reverse Recovery Time
(I_S = -76A, ^di/_dt = 100A/µs)
Reverse Recovery Charge
Q_rr
(I_S = -76A, ^di/_dt = 100A/µs)
Peak Recovery Current
I_RRM
(I_S = -76A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
76 _Amps
304
1.3 Volts
8
V/ns
240
ns
500
1.1
µC
5.2
12
Amps
22
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.27
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T_j = +25°C, L = 0.87mH, R_G = 25Ω, Peak I_L = 76A
5 ^dv/_dt numbers reflect the limitations of the test circuit rather than the
device itself. I_S ≤ -I_D76A ^di/_dt ≤ 700A/µs V_R ≤ 300V T_J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.30
0.25
0.9
0.20
0.7
0.15
0.5
Note:
0.10
0.3
t1
0.05
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
0
10^-5
10^-4
10^-3
10^-2
10^-1
1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION