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APT30GT60AR Datasheet, PDF (2/2 Pages) Advanced Power Technology – The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.
DYNAMIC CHARACTERISTICS
APT30GT60AR
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
1600
155
pF
90
Qg
Total Gate Charge 3
Qge Gate-Emitter Charge
Qgc Gate-Collector ("Miller") Charge
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
140
60
nC
12
td(on) Turn-on Delay Time
Resistive Switching (25°C)
14
tr
td(off)
Rise Time
Turn-off Delay Time
VGE = 15V
VCC = 0.8VCES
IC = IC2
55
ns
190
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
PRELIMINARY Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
RG = 10W
140
18
Inductive Switching (150°C)
30
VCLAMP(Peak) = 0.66VCES
300
VGE = 15V
IC = IC2
25
RG = 10W
0.5
TJ = +150°C
1.2
1.7
Inductive Switching (25°C)
18
VCLAMP(Peak) = 0.66VCES
30
VGE = 15V
IC = IC2
260
ns
mJ
ns
tf
Fall Time
RG = 10W
20
Ets
Total Switching Losses
TJ = +25°C
1.3
mJ
gfe Forward Transconductance
VCE = 20V, IC = IC2
6
S
THERMAL CHARACTERISTICS
Symbol Characteristic
RQJC
RQJA
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.78
°C/W
40
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 IC = IC2, RGE = 25W, L = 144µH, Tj = 25°C
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.