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APT25GP120B.pdf Datasheet, PDF (2/6 Pages) –
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DYNAMIC CHARACTERISTICS
APT25GP120B
Symbol Characteristic
Test Conditions
MIN
Cies IInput Capacitance
Capacitance
Coes Output Capacitance
VGE = 0V, VCE = 25V
Cres Reverse Transfer Capacitance
f = 1 MHz
VGEP Gate-to-Emitter Plateau Voltage
Gate Charge
Qg
Total Gate Charge 3
Qge Gate-Emitter Charge
Qgc Gate-Collector ("Miller ") Charge
VGE = 15V
VCE = 600V
IC = 25A
RBSOA Reverse Bias Safe Operating Area
TJ = 150°C, RG = 5Ω, VGE = 90
15V, L = 100µH,VCE = 960V
td(on)
tr
td(off)
tf
Eon1
Eon2
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Inductive Switching (25°C)
VCLAMP(Peak) = 600V
VGE = 15V
IC = 25A
RG = 5Ω
TJ = +25°C
Eoff
Turn-off Switching Energy 6
td(on)
tr
td(off)
tf
Eon1
Eon2
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Inductive Switching (125°C)
VCLAMP(Peak) = 600V
VGE = 15V
IC = 25A
RG = 5Ω
TJ = +125°C
Eoff
Turn-off Switching Energy 6
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
MIN
RΘJC
RΘJC
WT
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
TYP
2090
200
40
7.5
110
15
50
MAX
UNIT
pF
V
nC
A
12
14
ns
70
39
500
1092
µJ
438
12
14
ns
109
88
500
1577
µJ
1187
TYP MAX UNIT
.30
°C/W
N/A
5.90 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
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