APT20M38BVR Datasheet, PDF (2/4 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

DYNAMIC CHARACTERISTICS
Symbol
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 0.5 V_DSS
I_D = I_D[Cont.] @ 25°C
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D[Cont.] @ 25°C
R_G = 1.6Ω
APT20M38BVR
MIN TYP MAX UNIT
5100 6120
1145 1600 pF
390 585
148 225
47
75
nC
75 110
14
28
21
42
ns
48
75
10
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I_S
I_SM
V_SD
t _rr
Q _rr
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current ¹ (Body Diode)
Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D[Cont.])
Reverse Recovery Time (I_S = -I_D[Cont.], dl_S/dt = 100A/µs)
Reverse Recovery Charge (I_S = -I_D[Cont.], dl_S/dt = 100A/µs)
MIN TYP MAX UNIT
67
Amps
268
1.3 Volts
160
ns
1.3
µC
THERMAL CHARACTERISTICS
Symbol
R_θJC
R_θJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.34
40
°C/W
1 _{Repetitive Rating: Pulse width limited by maximum junction}
temperature.
2 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
3 _{See MIL-STD-750 Method 3471}
4 _{Starting Tj = +25°C, L = 0.58mH, RG = 25Ω, Peak IL = 67A}
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.4
D=0.5
0.1
0.2
0.05
0.1
0.05
0.01
0.005
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
0.001
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION