APT20M36BFLL Datasheet, PDF (2/2 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

DYNAMIC CHARACTERISTICS
APT20M36 BFLL - SFLL
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
C_iss
C_oss
Input Capacitance
Output Capacitance
V_GS = 0V
V_DS = 25V
2840
950
C_rss Reverse Transfer Capacitance
f = 1 MHz
73
Q_g
Q_gs
L _Qgd
ICA ^td(on)
t_r
HN t_d(off)
C _tf
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V_GS = 10V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
R_G = 0.6W
TE _{ION SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS}
E T _Symbol
NC _{MA IS}
VA ^{R ISM}
D ^{O V}SD
A _INF dv_/dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current ¹ (Body Diode)
Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D [Cont.])
Peak Diode Recovery ^dv/_dt ⁵
70
21
39
9
12
23
8
MIN TYP MAX
65
260
1.3
5
Reverse Recovery Time
t_rr
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
200
300
Reverse Recovery Charge
Q_rr
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
T_j = 25°C
0.7
T_j = 125°C
2.4
I_RRM
Peak Recovery Current
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
T_j = 25°C
10
T_j = 125°C
18
pF
nC
ns
UNIT
Amps
Volts
V/ns
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX
R_qJC
R_qJA
Junction to Case
Junction to Ambient
0.38
40
1 _{Repetitive Rating: Pulse width limited by maximum junction}
temperature.
2 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
3 _{See MIL-STD-750 Method 3471}
4 _{Starting Tj = +25°C, L = .615mH, RG = 25W, Peak IL = 65A}
APT Reserves the right to change, without notice, the specifications and information contained herein.
UNIT
°C/W
TO-247 Package Outline
D³PAK Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
1.04 (.041)
1.15 (.045)
13.41 (.528)
13.51 (.532)
0.46
0.56
(.018)
(.022)
{3
Plcs}
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058