APT20M34BLL Datasheet, PDF (2/2 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

DYNAMIC CHARACTERISTICS
APT20M34 BLL - SLL
Symbol Characteristic
Test Conditions
MIN TYP MAX
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GS = 0V
V_DS = 25V
f = 1 MHz
3440
1160
88
Q_g
Q_gs
L _Qgd
ICA ^td(on)
N ^tr
H _td(off)
EC ^{N tf}
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V_GS = 10V
V_DD = 0.5 V_DSS
I_D = I_D[Cont.] @ 25°C
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D[Cont.] @ 25°C
R_G = 1.6W
CE ^T ATIO _{SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS}
VAN ^{RM Symbol}
D ^{O IS}
A _INF ^I_SM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current ¹ (Body Diode)
85
26
47
11
18
26
12
MIN TYP MAX
74
296
V_SD
Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D[Cont.])
1.3
t _rr
Reverse Recovery Time (I_S = -I_D[Cont.], dl_S/dt = 100A/µs)
300
Q _rr Reverse Recovery Charge (I_S = -I_D[Cont.], dl_S/dt = 100A/µs)
1.3
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
THERMAL CHARACTERISTICS
Symbol
R_qJC
R_qJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.31
40
°C/W
1 _{Repetitive Rating: Pulse width limited by maximum junction}
temperature.
2 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
3 _{See MIL-STD-750 Method 3471}
4 _{Starting Tj = +25°C, L =.475mH, RG = 25W, Peak IL = 74A}
APT Reserves the right to change, without notice, the specifications and information contained herein.
TO-247 Package Outline
D³PAK Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
1.04 (.041)
1.15 (.045)
13.41 (.528)
13.51 (.532)
0.46
0.56
(.018)
(.022)
{3
Plcs}
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058