APT20M34BFLL_04 Datasheet, PDF (2/5 Pages) Advanced Power Technology – POWER MOS 7 R FREDFET

DYNAMIC CHARACTERISTICS
APT20M34BFLL_SFLL
Symbol Characteristic
Test Conditions
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GS = 0V
V_DS = 25V
f = 1 MHz
Q_g
Total Gate Charge ³
Q_{gs Gate-Source Charge}
Q_{gd Gate-Drain ("Miller") Charge}
V_GS = 10V
V_DD = 100V
I_D = 74A @ 25°C
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
RESISTIVE SWITCHING
V_GS = 15V
V_DD = 100V
I_D = 74A @ 25°C
R_G = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 133V, V_GS = 15V
I_D = 74A, R_G = 5Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 133V, V_GS = 15V
I_D = 74A, R_G = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
MIN
TYP
3660
1170
60
60
23
26
10
27
25
4
505
395
640
425
MAX
UNIT
pF
nC
ns
µJ
TYP MAX UNIT
I_S
Continuous Source Current (Body Diode)
I_SM Pulsed Source Current ¹ (Body Diode)
V_SD Diode Forward Voltage ² (V_GS = 0V, I_S = -74A)
dv_{/dt Peak Diode Recovery} dv_/dt 5
Reverse Recovery Time
t_rr
(I_S = -74A, ^di/_dt = 100A/µs)
Reverse Recovery Charge
Q_rr
(I_S = -74A, ^di/_dt = 100A/µs)
Peak Recovery Current
I_RRM
(I_S = -74A, ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
74 _Amps
296
1.3 Volts
8
V/ns
240
ns
420
1.0
µC
2.0
10
Amps
16
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.31
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T_j = +25°C, L = 0.470mH, R_G = 25Ω, Peak I_L = 74A
5 ^dv/_dt numbers reflect the limitations of the test circuit rather than the
device itself. I_S ≤ -I_D74A ^di/_dt ≤ 700A/µs V_R ≤ V_DSS T_J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
0.9
0.25
0.20
0.15
0.10
0.05
0
10^-5
0.7
0.5
Note:
t1
0.3
t2
Duty Factor D = ^t1/t2
0.1
Peak TJ = PDM x Z_θJC + TC
0.05
SINGLE PULSE
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION