APT20M18B2VR Datasheet, PDF (2/2 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

DYNAMIC CHARACTERISTICS
APT20M18 B2VR - LVR
Symbol Characteristic
Test Conditions
MIN TYP MAX
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GS = 0V
V_DS = 25V
f = 1 MHz
9910
2270
650
Q_g
L ^Qgs
A Q_gd
IC _td(on)
HN ^tr
C t_d(off)
TE ^{N tf}
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V_GS = 10V
330
V_DD = 0.5 V_DSS
75
I_D = 0.5 I_D[Cont.] @ 25°C
143
V_GS = 15V
18
V_DD = 0.5 V_DSS
27
I_D = I_D[Cont.] @ 25°C
54
R_G = 0.6W
6
CED ^{ATIO SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS}
AN ^{RM Symbol}
DV ^{FO IS}
A IN ^ISM
Characteristic / Test Conditions
Continuous Source Current ⁵ (Body Diode)
Pulsed Source Current ^{1 5} (Body Diode)
MIN TYP MAX
100
400
V_SD
Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D[Cont.])
1.3
t _rr
Reverse Recovery Time (I_S = -I_D[Cont.], dl_S/dt = 100A/µs)
360
Q _rr Reverse Recovery Charge (I_S = -I_D[Cont.], dl_S/dt = 100A/µs)
6.7
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
THERMAL CHARACTERISTICS
Symbol
R_qJC
R_qJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.20
40
°C/W
1 _{Repetitive Rating: Pulse width limited by maximum Tj}
2 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
3 _{See MIL-STD-750 Method 3471}
4 _{Starting Tj = +25°C, L = 600µH, RG = 25W, Peak IL = 100A}
5 _{The maximum current is limited by lead temperature.}
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX™ (B2) Package Outline
TO-264 (L) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
20.80 (.819)
21.46 (.845)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
5.79 (.228)
6.20 (.244)
3.10 (.122)
3.48 (.137)
25.48 (1.003)
26.49 (1.043)
0.40 (.016)
0.79 (.031)
4.50
(.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector
Emitter
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903
5,256,583 4,748,103
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
Gate
Collector
Emitter
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.59 (.102)
2.79 (.110)
3.00 (.118)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
5,089,434 5,182,234 5,019,522 5,262,336
5,283,202 5,231,474 5,434,095 5,528,058