APT20M18B2VFR Datasheet, PDF (2/2 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

DYNAMIC CHARACTERISTICS
APT20M18 B2VFR - LVFR
Symbol Characteristic
Test Conditions
MIN TYP MAX
C_iss Input Capacitance
V_GS = 0V
9910
C_oss Output Capacitance
V_DS = 25V
2270
C_rss Reverse Transfer Capacitance
f = 1 MHz
650
Q_g
L ^Qgs
A _Qgd
IC _td(on)
N _{t r}
CH ^td^(off)
TE ^{N tf}
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V_GS = 10V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
R_G = 0.6W
D ^{IO SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS}
CE ^{AT Symbol}
N ^{M I}_S
A ^R _ISM
DV ^{FO VSD}
A IN ^dv/_dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current ¹ (Body Diode)
Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D [Cont.])
Peak Diode Recovery ^dv/_dt ⁶
330
75
143
18
27
54
6
MIN TYP MAX
100
400
1.3
5
Reverse Recovery Time
t_rr
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
230
450
Reverse Recovery Charge
Q_rr
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
T_j = 25°C
0.9
T_j = 125°C
3.4
I_RRM
Peak Recovery Current
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
T_j = 25°C
11
T_j = 125°C
20
UNIT
pF
nC
ns
UNIT
Amps
Volts
V/ns
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_qJC
R_qJA
Junction to Case
Junction to Ambient
0.20
40
°C/W
1 _{Repetitive Rating: Pulse width limited by maximum Tj}
2 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
3 _{See MIL-STD-750 Method 3471}
4 _{Starting Tj = +25°C, L = 600µH, RG = 25W, Peak IL = 100A}
5 _{The maximum current is limited by lead temperature.}
6 _{IS £ ID [Cont.],} di_{/dt = 100A/µs, VR = 50V, Tj £ 150°C, RG = 2.0W}
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX™ (B2) Package Outline
TO-264 (L) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
20.80 (.819)
21.46 (.845)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
5.79 (.228)
6.20 (.244)
3.10 (.122)
3.48 (.137)
25.48 (1.003)
26.49 (1.043)
0.40 (.016)
0.79 (.031)
4.50
(.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector
Emitter
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903
5,256,583 4,748,103
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
Gate
Collector
Emitter
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.59 (.102)
2.79 (.110)
3.00 (.118)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
5,089,434 5,182,234 5,019,522 5,262,336
5,283,202 5,231,474 5,434,095 5,528,058