APT20M16B2FLL Datasheet, PDF (2/2 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

DYNAMIC CHARACTERISTICS
APT20M16 B2FLL - LFLL
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GS = 0V
V_DS = 25V
f = 1 MHz
7020
2380
pF
180
Q_g
Q_gs
L _Qgd
ICA ^td(on)
t_r
HN t_d(off)
C _tf
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V_GS = 10V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
R_G = 0.6W
TE _{ION SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS}
E T _Symbol
NC _{MA IS}
VA ^{R ISM}
D ^{O V}SD
A _INF dv_/dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current ¹ (Body Diode)
Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D [Cont.])
Peak Diode Recovery ^dv/_dt ⁶
174
53
96
14
24
29
7
MIN TYP MAX
100
400
1.3
8
Reverse Recovery Time
t_rr
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
230
450
Reverse Recovery Charge
Q_rr
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
T_j = 25°C
0.9
T_j = 125°C
3.4
I_RRM
Peak Recovery Current
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
T_j = 25°C
11
T_j = 125°C
20
nC
ns
UNIT
Amps
Volts
V/ns
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_qJC
R_qJA
Junction to Case
Junction to Ambient
0.18
40
°C/W
1 _{Repetitive Rating: Pulse width limited by maximum junction}
temperature.
4 _{Starting Tj = +25°C, L = .6mH, RG = 25W, Peak IL = 100A}
5 _{The maximum current is limited by lead temperature}
2 _{Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%}
3 _{See MIL-STD-750 Method 3471}
6 dv_{/dt numbers reflect the limitations of the test circuit rather than the}
device itself. I_S £ -I_D[Cont.] ^di/_dt £ 700A/µs V_R £ V_DSS T_J £ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX^TM (B2) Package Outline
TO-264 (L) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
20.80 (.819)
21.46 (.845)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
5.79 (.228)
6.20 (.244)
3.10 (.122)
3.48 (.137)
25.48 (1.003)
26.49 (1.043)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
2.29 (.090)
2.69 (.106)
Gate
Drain
Source