APT20GT60CR Datasheet, PDF (2/2 Pages) Advanced Power Technology – The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.

DYNAMIC CHARACTERISTICS
APT20GT60CR
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
C_ies
C_oes
C_res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance
V_GE = 0V
V_CE = 25V
f = 1 MHz
1100
110
pF
65
Q_g
Total Gate Charge ³
Q_ge Gate-Emitter Charge
Q_gc Gate-Collector ("Miller") Charge
Gate Charge
V_GE = 15V
V_CC = 0.5V_CES
I_C = I_C2
95
40
nC
8
t_d(on) Turn-on Delay Time
Resistive Switching (25°C)
10
t_r
t_d(off)
Rise Time
Turn-off Delay Time
V_GE = 15V
V_CC = 0.8V_CES
I_C = I_C2
34
ns
115
t_f
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
PRELIMINARY ^{Fall Time}
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
R_G = 10W
Inductive Switching (150°C)
V_CLAMP(Peak) = 0.66V_CES
V_GE = 15V
I_C = I_C2
R_G = 10W
T_J = +150°C
Inductive Switching (25°C)
V_CLAMP(Peak) = 0.66V_CES
V_GE = 15V
I_C = I_C2
125
15
15
190
30
0.55
0.45
1.0
15
18
160
ns
mJ
ns
t_f
Fall Time
R_G = 10W
25
E_ts
Total Switching Losses
T_J = +25°C
0.60
mJ
gfe Forward Transconductance
V_CE = 20V, I_C = I_C2
4
S
THERMAL CHARACTERISTICS
Symbol Characteristic
R_QJC
R_QJA
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
1.25
80
°C/W
1 _{Repetitive Rating: Pulse width limited by maximum junction temperature.}
2 _{IC = IC2, RGE = 25W, L = 200µH, Tj = 25°C}
3 _{See MIL-STD-750 Method 3471}
4 _{The maximum current is limited by lead temperature.}
APT Reserves the right to change, without notice, the specifications and information contained herein.