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APT20GF120KR Datasheet, PDF (2/5 Pages) Advanced Power Technology – The Fast IGBT is a new generation of high voltage power IGBTs.
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
MIN
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.50VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.8VCES
IC = IC2
RG = 10Ω
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10Ω
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10Ω
TJ = +25°C
VCE = 20V, IC = 15A
APT20GF120KR
TYP MAX UNIT
1100 1500
110 165 pF
70 105
95 150
13
20
nC
55
85
17
75
ns
95
170
20
30
35
70
ns
175 260
90 135
1.2
1.3
mJ
2.5
20
35
ns
150
90
2.3
mJ
12
S
THERMAL CHARACTERISTICS
Symbol Characteristic
RΘJC
RΘJA
Torque
Junction to Case
Junction to Ambient
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
MIN TYP MAX UNIT
0.63
80
°C/W
10
lb•in
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 IC = 15A, VCC = 50V, RGE = 25Ω, L = 200µH, Tj = 25°C
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.