APT12080B2VFR Datasheet, PDF (2/4 Pages) Advanced Power Technology – POWER MOS V

DYNAMIC CHARACTERISTICS
Symbol Characteristic
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
Q_g
Total Gate Charge ³
Q_gs Gate-Source Charge
Q_gd Gate-Drain ("Miller") Charge
t_d(on) Turn-on Delay Time
t_r
Rise Time
t_d(off) Turn-off Delay Time
t_f
Fall Time
Test Conditions
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
R_G = 0.6Ω
APT12080B2VFR_LVFR
MIN TYP MAX UNIT
6500 7800
530 740 pF
250 375
325 485
29
45
nC
145 215
16
32
12
24
ns
59
90
12
24
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I_S
I_SM
V_SD
dv_/dt
t_rr
Q_rr
I_RRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current ¹ (Body Diode)
Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D [Cont.])
Peak Diode Recovery ^dv/_dt ⁵
Reverse Recovery Time
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
Reverse Recovery Charge
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
Peak Recovery Current
(I_S = -I_D [Cont.], ^di/_dt = 100A/µs)
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
MIN TYP MAX UNIT
16
Amps
64
1.3 Volts
18 V/ns
350
ns
700
2
µC
6
12
Amps
22
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.24
40
°C/W
1 _{Repetitive Rating: Pulse width limited by maximum junction}
3 _{See MIL-STD-750 Method 3471}
temperature.
4 _{Starting Tj = +25°C, L = 19.53mH, RG = 25Ω, Peak IL = 16A}
2 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
5 _{IS ≤ ID [Cont.],} di_{/dt = 100A/µs, Tj ≤ 150°C, RG = 2.0Ω VR = 200V.}
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
D=0.5
0.1
0.2
0.05
0.1
0.01
0.005
0.05
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
0.001
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION