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APT10M11JVRU2.pdf Datasheet, PDF (2/7 Pages) –
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APT10M11JVRU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 250µA
100
IDSS Zero Gate Voltage Drain Current
VGS = 0V,VDS = 100V Tj = 25°C
VGS = 0V,VDS = 80V Tj = 125°C
RDS(on) Drain – Source on Resistance
VGS = 10V, ID = 71A
VGS(th) Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
2
IGSS Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
V
250
µA
1000
11 mΩ
4V
±100 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 50V
ID = 50A @ TJ=25°C
VGS = 15V
VBus = 50V
ID = 142A @ TJ=25°C
RG = 0.6Ω
Min Typ Max Unit
8600
3200
pF
1180
300
95
nC
110
16
48
ns
51
9
Diode ratings and characteristics
Symbol Characteristic
VF Diode Forward Voltage
IRM Maximum Reverse Leakage Current
CT Junction Capacitance
Reverse Recovery Time
trr
Reverse Recovery Time
IRRM Maximum Reverse Recovery Current
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Maximum Reverse Recovery Current
Test Conditions
Min Typ Max Unit
IF = 30A
IF = 60A
IF = 30A
VR = 200V
VR = 200V
VR = 200V
IF=1A,VR=30V
di/dt =200A/µs
IF = 30A
VR = 133V
di/dt =200A/µs
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1.1 1.15
1.4
V
0.9
250
500
µA
94
pF
21
24
ns
48
3
A
6
33
nC
150
IF = 30A
31
ns
VR = 133V
Tj = 125°C
335
nC
di/dt =1000A/µs
19
A
APT website – http://www.advancedpower.com
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