APT10086BLC Datasheet, PDF (2/2 Pages) Advanced Power Technology – Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

DYNAMIC CHARACTERISTICS
APT10086 BLC - SLC
Symbol Characteristic
Test Conditions
MIN TYP MAX
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_GS = 0V
V_DS = 25V
f = 1 MHz
2800
350
120
Q_g
Total Gate Charge ³
V_GS = 10V
95
Q_gs
L ^Qgd
A t_d(on)
IC t_r
N _td(off)
CH ^t_f
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V_DD = 0.5 V_DSS
I_D = I_D[Cont.] @ 25°C
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D[Cont.] @ 25°C
R_G = 1.6W
ED ^{TE TION SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS}
C ^A _Symbol
AN ^{RM IS}
V ^O I_SM
AD INF ^VSD
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current ¹ (Body Diode)
Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D[Cont.])
17
52
14
10
31
11
MIN TYP MAX
13
52
1.3
t _rr
Reverse Recovery Time (I_S = -I_D[Cont.], dl_S/dt = 100A/µs)
800
Q _rr Reverse Recovery Charge (I_S = -I_D[Cont.], dl_S/dt = 100A/µs)
11.0
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
THERMAL CHARACTERISTICS
Symbol
R_qJC
R_qJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.34
°C/W
40
1 _{Repetitive Rating: Pulse width limited by maximum junction}
temperature.
2 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
3 _{See MIL-STD-750 Method 3471}
4 _{Starting Tj = +25°C, L =15.38mH, RG = 25W, Peak IL = 13A}
APT Reserves the right to change, without notice, the specifications and information contained herein.
TO-247 Package Outline
D³PAK Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
1.04 (.041)
1.15 (.045)
13.41 (.528)
13.51 (.532)
0.46
0.56
(.018)
(.022)
{3
Plcs}
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058