APT10045JLL_03 Datasheet, PDF (2/5 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

DYNAMIC CHARACTERISTICS
Symbol Characteristic
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Test Conditions
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 500V
I_D = 23A @ 25°C
RESISTIVE SWITCHING
V_GS = 15V
V_DD = 500V
I_D = 23A @ 25°C
R_G = 1.6Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 670V, V_GS = 15V
I_D = 23A, R_G = 5Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 670V V_GS = 15V
I_D = 23A, R_G = 5Ω
APT10045JLL
MIN
TYP MAX _UNIT
4350
715
pF
120
154
26
nC
97
10
5
30
ns
8
639
380
1046
µJ
451
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
I_S
Continuous Source Current (Body Diode)
I_SM
Pulsed Source Current ¹ (Body Diode)
V_SD Diode Forward Voltage ² (V_GS = 0V, I_S = -I_D21A)
t _rr
Reverse Recovery Time (I_S = -I_D21A, dl_S/dt = 100A/µs)
Q _rr Reverse Recovery Charge (I_S = -I_D21A, dl_S/dt = 100A/µs)
dv_{/dt Peak Diode Recovery} dv_/dt 5
21
Amps
84
1.3 Volts
560
ns
5.5
µC
10 ^V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.27
°C/W
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T_j = +25°C, L = 11.34mH, R_G = 25Ω, Peak I_L = 21A
5 ^dv/_dt numbers reflect the limitations of the test circuit rather than the
device itself. I_S ≤ -I_D21A ^di/_dt ≤ 700A/µs V_R ≤ V_DSS T_J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30
0.25
0.9
0.20
0.7
0.15
0.10
0.05
0
10^-5
0.5
Note:
t1
0.3
t2
Duty Factor D = ^t1/t2
0.1
Peak TJ = PDM x Z_θJC + TC
0.05
SINGLE PULSE
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION