APL1001J_02 Datasheet, PDF (2/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

DYNAMIC CHARACTERISTICS
Symbol
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D [Cont.] @ 25°C
R_G = 0.6Ω
APL1001J
MIN TYP MAX UNIT
6000 7200
775 1080 _pF
285 430
14
28
14
28
ns
60
92
14
20
SAFE OPERATING AREA CHARACTERISTICS
Symbol Characteristic
Test Conditions / Part Number
MIN TYP MAX ^UNIT
SOA1 Safe Operating Area ^V_DS ^{= 400 V, I}_DS ^{= 0.813A, t = 20 sec., T}_C ^{= 60°C} 325
Watts
1 _{Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)}
2 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
3 _{See MIL-STD-750 Method 3471}
0.3
D=0.5
0.1
0.2
0.05
0.1
0.01
0.005
0.001
10^-5
0.05
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
40
VGS=6.5V, 7.0V, 8.0V,
10V & 15V
30
6.0 V
5.5 V
20
5.0 V
10
4.5 V
0
0
20
40
60
80 100
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
40
VGS= 15V, 10V, 8V, 7V & 6.5V
30
6.0 V
5.5 V
20
5.0 V
10
4.5 V
0
0
4
8
12
16
20
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS