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| AP4936M Datasheet, PDF (2/6 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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AP4936M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=4.5V, ID=3.5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
VDS=10V, ID=5A
VDS=25V, VGS=0V
VDS=20V ,VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS= ± 20V
ID=5A
Gate-Source Charge
VDS=16V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VGS=5V
VDS=16V
ID=5A
RG=3.3Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=3.2Ω
VGS=0V
VDS=25V
f=1.0MHz
25 -
-
V
- 0.03 - V/â
-
- 37 mΩ
-
- 60 mΩ
1
-
3
V
- 6.5 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 6.9 - nC
- 1.2 - nC
- 4.5 - nC
-
6
- ns
- 17.5 - ns
- 14.5 - ns
- 5.5 - ns
- 218 - pF
- 155 - pF
- 63 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.2V
Tj=25â, IS=1.7A, VGS=0V
Min. Typ. Max. Units
-
- 1.67 A
-
- 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135â/W when mounted on Min. copper pad.
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