VRF150 Datasheet, PDF (1/5 Pages) Advanced Power Technology – N-CHANNEL RF POWER VERTICAL MOSFET

150W, 50V, 150MHz
N-CHANNEL RF POWER VERTICAL MOSFET
PRELIMINARY INFORMATION
VRF150
BROADBAND HF/VHF VERTICAL D-MOS
ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS
Features
• 150W WITH 10dB TYPICAL GAIN @ 150MHz, 50V
• 150W WITH 18dB MIN GAIN @ 30MHz, 50V
• EXCELLENT STABILITY & LOW IMD
• COMMON SOURCE CONFIGURATION
• 30:1 LOAD VSWR CAPABILITY AT SPECIFIED
OPERATING CONDITIONS
• NITRIDE PASSIVATED
• REFRACTORY GOLD METALLIZATION
DESCRIPTION:
The VRF150 is a gold metallized silicon, n-channel RF power
transistor designed for broadband commercial and military
applications requiring high power and gain without compromising
reliability, ruggedness, and intermodulation distortion.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_(BR)DSS
V_DGO
V_GS
I_D
P_DISS
T_J
T_STG
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Drain Current
Total Device Power Dissipation
Max Operating Junction Temperature
Storage Temperature
Thermal Data
R_è(J-C)
Thermal Resistance Junction-Case
1. DRAIN
3. GATE
2. SOURCE 4. SOURCE
Value
125
125
±40
16
300
+200
-65 to +150
0.6
Unit
V
V
V
A
W
°C
°C
° C/W
VRF150.PDF 03-23-04
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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