SD1429-03 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

RF & MICROWAVE TRANSISTORS
UHF MOBILE APPLICATIONS
Features
• 470 MHz
• 12.5 VOLTS
• POUT = 15.0 WATTS
• G_P = 7.5 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The SD1429-03 is a 12.5V epitaxial silicon NPN planar
transistor designed primarily for UHF communications.
It withstands infinite VSWR at rated operating conditions.
SD1429-03
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
V_CEO
V_CES
V_EBO
I_C
P_tot
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
TJ
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
12-05-2002
Value
36
16
36
4.0
3.4
37.5
+200
-65 to +150
4.6
Unit
V
V
V
V
W
A
°C
°C
°C/W