SD1146 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS

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18936-1013
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RF AND MICROWAVE TRANSISTORS
UHF MOBILE APPLICATIONS
Features
• 470 MHz
• 12.5 Volts
• Efficiency 60%
• Common Emitter
• P_OUT = 10 W Min.
• G_P = 6.0 dB Gain
DESCRIPTION:
The SD1146 is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed primarily for UHF communications. This device
utilizes improved metallization to achieve infinite VSWR at rated
operating conditions.
SD1146
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_CES
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Device Current
P_DISS
Power Dissipation
T_J
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(j-c) Junction-Case Thermal Resistance
Value
Unit
36
V
16
V
36
V
4.0
V
2.0
A
37.5
W
+200
°C
-65 to +150
°C
4.7
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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