SD1014-06 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
Features
• 175 MHz
• 12.5 VOLTS
• P_OUT = 15 WATTS
• G_P = 6.3 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The SD1014-06 is an epitaxial silicon NPN planar transistor
designed primarily for VHF mobile communications. This device
utilizes emitter ballasting for improved ruggedness and
reliability.
SD1014-06
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_DISS
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
THERMAL DATA
R_TH(J-C)
Junction-case Thermal Resistance
Value
36
18
4.0
2.5
31
+200
-65 to +150
5.6
Unit
V
V
V
A
W
°C
°C
° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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