SD1013-03 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS VHF APPLICATIONS

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MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE TRANSISTORS
VHF APPLICATIONS
Features
• 150 MHz
• 28 VOLTS
• P_OUT = 10 WATTS
• G_P = 10 dB MINIMUM
• η = 50%
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The SD1013-03 is a 28V epitaxial silicon NPN planar transistor
designed primarily for FM communications. This device
utilizes emitter ballasting for improved ruggedness and
reliability.
SD1013-03
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_DISS
T_J
T_STG
Parameter
Collector-base Voltage
Collector-emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
MSCXXXX.PDF 08-12-02
Value
65
35
4.0
1.0
13
+200
-65 to +150
13.5
Unit
V
V
V
A
W
°C
°C
° C/W