MSC4001 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

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RF AND MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
MSC4001
Features
• 3:1 VSWR AT RATED CONDITIONS
• HERMETIC STRIPAC^® PACKAGE
• P_OUT = 1.0 W MIN. WITH 5.0 dB GAIN AT 4.0 GHz
DESCRIPTION:
The MSC4001 common-base, hermetically sealed silicon NPN
microwave power transistor features a unique Microgrid™
structure and can withstand 3:1 VSWR at any phase angle under
rated conditions. It is designed for Class C amplifier applications
in the 2.0 – 4.4 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
P_DISS
I_C
V_CC
T_J
T_STG
Power Dissipation*
Device Current*
Collector Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
R_TH(j-c)
Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
7.0
0.25
30
+200
-65 to +200
25
Unit
W
A
V
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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