MSC1600M Datasheet, PDF (1/5 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• 1090 MHz
• 25:1 VSWR CAPABILITY
• P_OUT = 600 WATTS
• G_P = 6.0 dB MINIMUM
• GOLD METALIZATION
• INPUT MATCHING
• COMMON BASE CONFIGURATION
DESCRIPTION:
The MSC1600M is a high power pulsed transistor specifically designed
for IFF avionics applications. It is designed for operation under short
pulse width and low duty cycle pulse conditions and is capable of
withstanding a minimum 25:1 load mismatch at rated RF conditions.
Internal impedance matching and gold metallization ensure high
product reliability and consistency.
MSC1600M
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
P_DISS
I_C
V_CC
T_J
T_STG
Parameter
Power Dissipation* (T_C ≤ 100°C)
Device Current*
Collector - Base Voltage*
Junction Temperature
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
1670
43
55
+250
-65 to +200
0.09
Unit
W
A
V
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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