MSC1450M Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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RF AND MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• REFRACTORY/GOLD METALLIZATION
• LOW THERMAL RESISTANCE
• RUGGEDIZED VSWR 25:1
• INTERNAL INPUT / OUTPUT MATCHING
• METAL/CERAMIC HERMETIC PACKAGE
• P_OUT = 450 W MINIMUM
• 7 dB gain
MSC1450M
DESCRIPTION:
The MSC1450M is a high-power pulsed transistor specifically
designed for IFF avionics applications.
This device is capable of withstanding a minimum 25:1 load mismatch
at any phase angle under full rated conditions.
The MSC1450M is housed in the unique BIGPAC™ package with
internal input/output matching structures.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CC
I_C
P_DISS
T_J
Collector-Supply Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
Value
Unit
55
V
28
A
910
W
250
°C
– 65 to + 200
°C
Thermal Data
R_TH(j-c)
Junction-Case Thermal Resistance
0.15
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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