MSC1400M Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• 1025-1150 MHz
• 25:1 VSWR CAPABILITY
• P_OUT = 400 WATTS
• G_P = 6.5 dB MINIMUM
• GOLD METALLIZATION
• INPUT/OUTPUT MATCHING
• COMMON BASE CONFIGURATION
DESCRIPTION:
The MSC1400M is a high power pulsed transistor specifically
designed for IFF avionics applications. It is designed for operation
under short pulse width and low duty cycle pulse conditions and is
capable of withstanding a minimum 25:1 load mismatch at rated RF
conditions. Internal impedance matching and gold metallization
ensure high product reliability and consistency.
MSC1400M
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
P_DISS
I_C
V_CC
T_J
T_STG
Parameter
Power Dissipation
Device Current
Collector - Base Voltage
Junction Temperature
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
Value
1000
28
55
+250
-65 to +150
0.12
Unit
W
A
V
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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