MSC1300M Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
MSC1300M
Features
• 1090 MHz
• COMMON BASE
• INTERNAL INPUT / OUTPUT MATCHING
• GOLD METALLIZATION
• CLASS C OPERATION
• POUT = 300 W MIN. WITH 6.3 dB GAIN
• RUGGEDIZED VSWR 20:1
• LOW THERMAL RESISTANCE
• METAL / CERAMIC HERMETIC PACKAGE
DESCRIPTION:
THE MS1300M IS A SILICON NPN BIPOLAR DEVICE SPECIFICALLY
DESIGNED FOR IFF AVIOICS APPLICATIONS AT 1090 MHz. THE
MS1300M IS DESIGNED TO WITHSTAND A 20:1 VSWR AT ALL PHASE
ANGLES UNDER FULL LOAD CONDITIONS.
GOLD METALLIZATION AND EMITTER BALLASTING ASSURE HIGH
RELIABILITY UNDER CLASS C AMPLIFIER OPERATION.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CC
I_C
P_DISS
T_J
T_STG
Parameter
Collector-Supply Voltage⁸
Device Current^*
Power Dissipation^*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
Value
55
18.8
625
+250
-65 to +150
Unit
V
A
W
°C
°C
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance*
*Applies only to rated RF Amplifier Operation
0.20
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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