MSC1075MP Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS

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RF AND MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
MSC1075MP
Features
• DESIGNED FOR HIGH POWER PULSED IFF, DME,
TACAN APPLICATIONS
• 80 W (typ.) IFF 1030 – 1090 MHz
• 75 W (min.) DME 1025 – 1150 MHz
• 50 W (typ.) TACAN 960 –1215 MHz
• 8.0 dB MIN. GAIN
• REFRACTORY GOLD METALLIZATION
• EMITTER BALLASTING AND LOW THERMAL
RESISTANCE FOR RELIABILITY AND RUGGEDNESS
• INFINITE LOAD VSWR CAPABILITY AT SPECIFIED
OPERATING CONDITIONS
• INPUT MATCHED COMMON BASE CONFIGURATION
DESCRIPTION:
The MSC1075MP is a gold-metallized silicon, NPN power transistor
designed for applications requiring high peak power and low duty
cycles, such as IFF, DME, and TACAN. It is packaged in the .280"
input-matched stripline flange package, resulting in improved
broadband performance and low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
V_CES
V_EBO
I_C
P_DISS
T_J
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
THERMAL DATA
R_TH(j-c)
Junction-Case Thermal Resistance
Value
Unit
65
V
65
V
3.5
V
5.5
A
218.7
W
+ 200
°C
–65 to +150
°C
0.8
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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