MSC1015MP Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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RF AND MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
MSC1015MP
Features
• DESIGNED FOR HIGH POWER PULSED IFF, DME,
TACAN APPLICATIONS
• 20 W (typ.) IFF 1030 – 1090 MHz
• 15 W (min.) DME 1025 – 1150 MHz
• 15 W (typ.) TACAN 960 –1215 MHz
• REFRACTORY GOLD METALLIZATION
• EMITTER BALLASTING AND LOW THERMAL
RESISTANCE FOR RELIABILITY AND RUGGEDNESS
• 20:1 LOAD VSWR CAPABILITY AT SPECIFIED
OPERATING CONDITIONS
• INPUT MATCHED, COMMON BASE CONFIGURATION
DESCRIPTION:
The MSC1015MP is a gold-metallized, epitaxial, silicon NPN power
transistor designed for applications requiring high peak power and
low duty cycles, such as IFF, DME, and TACAN. It is packaged in the
.280" input-matched stripline package, resulting in improved
broadband performance and low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
V_CES
V_EBO
I_C
P_DISS
T_J
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
THERMAL DATA
R_TH(j-c)
Junction-Case Thermal Resistance
Value
65
65
3.5
1.5
87.5
+ 200
–65 to +150
2
Unit
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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