MS652 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS

MS652/MS652S
RF & MICROWAVE TRANSISTORS
ESCRIPTION
KEY FEATURES
The MS652/MS652S is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed primarily for UHF communications. It withstands severe
mismatch under normal operating conditions.
§ 512 MHz
§ 12.5 Volts
§ Common Emitter
§ P_OUT = 5 W Min.
§ G_P = 10.0 dB Gain
MS652
MS652S
APPLICATIONS/BENEFITS
§ UHF Portable/Mobile
Applications
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25°C)
Symbol
Parameter
Value
Unit
V_CBO Collector-Base Voltage
36
V
V_CEO Collector-Emitter Voltage
16
V
V_EBO Emitter-Base Voltage
4.0
V
I_C
Device Current
2
A
P_DISS Power Dissipation
25
W
T_J
Junction Temperature
+200
°C
T_STG Storage Temperature
-65 to +150
°C
THERMAL DATA
R_{TH(j-c) Junction-Case Thermal Resistance}
7
°C/W
MS652.PDF 12-04-03
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