MS3302 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

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RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
Features
• 3.0 GHz
• GOLD METALIZATION
• EMITTER BALLASTED
• P_OUT = 4.5 W MINIMUM
• G_P = 4.5 dB
• ∞:1 VSWR CAPABILITY @ RATED CONDITIONS
• COMMON BASE CONFIGURATION
MS3302
DESCRIPTION:
The MS3302 is a common base silicon NPN microwave transistor
designed for general purpose applications over the 1.0 – 3.0 GHz
frequency range. The MS3302 utilizes an emitter ballasted die
geometry for maximum load VSWR capability under rated
conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
P_DISS
V_CC
I_C
T_J
T_STG
Parameter
Power Dissipation
Collector-Supply Voltage
Device Current
Junction Temperature
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
*Applies only to rated RF amplifier operation
Value
17.6
30
700
200
-65 to +200
8.5
Unit
W
V
mA
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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