MS3024 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

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RF AND MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
Features
• EMITTER BALLASTED
• INFINITE VSWR CAPABILITY AT RATED CONDITIONS
• REFRACTORY/GOLD METALLIZATION
• HERMETIC STRIPAC^® PACKAGE
• P_OUT = 5.0 W MIN. WITH 7.0 dB GAIN AT 2.0 GHz
MS3024
DESCRIPTION:
The MS3024 is a common base hermetically sealed silicon NPN
microwave transistor that utilizes a fishbone emitter ballasted
geometry with a refractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at any phase angle
under rated conditions. The MS3024 was designed for Class C
amplifier applications in the 1.0 – 2.0 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CC
I_C
P_DISS
T_J
Collector-Supply Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
Value
Unit
35
V
1
A
29
W
200
°C
–65 to +200
°C
THERMAL DATA
R_TH(j-c)
Junction-Case Thermal Resistance
6
°C/W
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