MS3023 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

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RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER
APPLICATIONS
Features
• GOLD METALIZATION
• Pout = 3.0 W MINIMUM
• 2.0 GHz
• Gp = 7.8 dB
• INFINITE VSWR CAPABLE @ RATED CONDITIONS
• HERMETIC PACKAGE
• COMMON BASE CONFIGURATION
DESCRIPTION:
The MS3023 is a common base, hermetically sealed silicon NPN
microwave power transistor. This device is designed for Class C
applications in the 1 - 2 GHz frequency range. Gold metalization
and emitter ballasting provide long-term reliability and superior
ruggedness.
MS3023
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
P_DISS
V_CC
I_C
T_J
T_STG
Parameter
Power Dissipation*
Collector-Supply Voltage*
Device Current*
Junction Temperature
Storage Temperature
THERMAL DATA
R_TH(J-C)
Thermal Resistance Junction-case
*Applies only to rated RF amplifier operation
Value
21.8
35
600
200
-65 to +200
8.0
Unit
W
V
mA
ºC
ºC
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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