MS3011 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE LINEAR APPLICATIONS
Features
· 2.0 GHz
· P_OUT = 30.0 dBm
· G_P = 7.0 dB MINIMUM
· 15:1 VSWR @ RATED CONDITIONS
· GOLD METALIZATION
· COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS3011 is a hermetically sealed NPN power transistor
featuring a unique matrix structure. This device is specifi-
cally designed for Class A linear applications to provide
high gain and high output power at the 1.0 dB compression
point.
MS3011
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
P_DISS
Parameter
Power Dissipation
V_CE
Collector-Emitter Bias Voltage
I_C
Device Current
T_J
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
12-10-2002
Value
5.5
20
500
200
-65 to +200
17
Unit
W
V
mA
ºC
ºC
°C/W