MS2604 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS

RF& MICROWAVE TRANSISTORS
S BAND RADAR APPLICATIONS
Features
• 2.7 – 3.1 GHz
• 40 VOLTS
• P_OUT = 25 WATTS
• G_P = 6.2 dB MINIMUM
• GOLD METALLIZATION
• INPUT/OUTPUT MATCHING
• COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2604 is a silicon NPN bipolar transistor designed
for pulsed S-Band radar applications.
The MS2604 is capable of operation over a wide range of
pulse widths and duty cycles. Internal impedance
matching and gold metalization provide consistent
broadband performance and long term reliability.
MS2604
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CC
Collector Supply Voltage
I_C
Device Current
P_DISS
Power Dissipation
T_J
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Junction - Case Thermal Resistance
12-05-2002
Value
46
4
100
200
-65 to +200
2.0
Unit
V
A
W
°C
°C
°C/W