MS2575 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• 1025-1150 MHz
• GOLD METALLIZATION
• INPUT MATCHED
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• P_OUT = 35 W MINIMUM
• G_P = 10.7 dB
DESCRIPTION:
The MS2575 is a medium power Class C transistor designed
specifically for pulsed L-Band avionics applications. Low RF
thermal resistance and computerized automatic wire bonding
techniques ensure high reliability and product consistency. The
MS2575 is housed in the IMPAC™ package with internal input
matching.
MS2575
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
P_DISS
V_CE
T_J
I_C
T_STG
Parameter
Power Dissipation
Collector-Emitter Bias Voltage
Junction Temperature
Device Current
Storage Temperature
THERMAL DATA
R_TH(J-C)
Junction-case Thermal Resistance
Value
150
55
200
3
-65 to +200
1.0
Unit
W
V
ºC
A
ºC
°C/W
dvanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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