MS2472 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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MS2472
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• DESIGNED FOR HIGH POWER PULSED IFF AND DME
APPLICATIONS
• 600 W (typ.) IFF 1030 – 1090 MHz
• 550 W (min.) DME 1025 – 1150 MHz
• 1025 - 1150 MHz
• P_OUT = 550 WATTS
• G_P = 5.6 dB MINIMUM
• GOLD METALLIZATION
• INTERNAL INPUT/OUTPUT MATCHED
• COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2472 is a hermetically sealed, gold metallized, silicon
NPN power transistor. The MS2472 is designed for applications
requiring high peak power and low duty cycles such as IFF and DME.
The MS2472 is internal input/output matched resulting in improved
broadband performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
V_CES
V_EBO
I_C
P_DISS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
T_J
Junction Temperature
T_STG
Storage Temperature
Value
65
65
3.5
40
1350
200
-65 to +150
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
0.06
Unit
V
V
V
A
W
ºC
ºC
° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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