MS2421 Datasheet, PDF (1/5 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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MS2421
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• DESIGNED FOR HIGH POWER PULSED IFF, DME, AND
TACAN APPLICATIONS
• 350 W (typ.) IFF 1030 – 1090 MHz
• 300 W (min.) DME 1025 – 1150 MHz
• 290 W (typ.) TACAN 960 – 1215 MHz
• 960 – 1215 MHz
• GOLD METALLIZATION
• P_OUT = 300W MINIMUM
• G_P = 6.3 dB MINIMUM
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• EMITTER BALLASTED
• COMMON BASE
DESCRIPTION:
The MS2421 is a gold metallized silicon, NPN power transistor
designed for applications requiring high peak power and low duty
cycles such as IFF, DME, and TACAN. The MS2421 is designed
with internal input/output matching resulting in improved
broadband performance and low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
P_DISS
V_CES
V_CBO
V_EBO
Power Dissipation
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
T_J
Junction Temperature
I_C
Device Current
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
Value
875
65
65
3.5
200
22
-65 to +200
0.20
Unit
W
V
V
V
ºC
A
ºC
° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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