MS2393 Datasheet, PDF (1/5 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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RF AND MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• Designed For High Power Pulse IFF, DME, and TACAN
Applications
• 200 W (typ.) IFF 1030 – 1090 MHz
• 150 W (min.) DME 1025 – 1150 MHz
• 140 W (typ.) TACAN 960 – 1215 MHz
• 8.2 dB Gain
• Refractory Gold Metallization
• Ballasting And Low Thermal Resistance For Reliability
And Ruggedness
• 20:1 Load VSWR At Specified Operating Conditions
• Input And Output Matched Common Base
Configuration
DESCRIPTION:
The MS2393 is a gold metallized, silicon NPN power transistor.
The MS2393 is designed for applications requiring high peak power
and low duty cycles such as IFF, DME and TACAN. The MS2393 is
packaged in a metal/ceramic package with internal input/output
matching, resulting in improved broadband performance and low
thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CES
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Device Current
P_DISS
Power Dissipation
T_J
Junction Temperature
T_STG
Storage Temperature
Value
65
65
3.5
11
583
+200
-65 to +150
Thermal Data
R_TH(j-c)
Junction-Case Thermal Resistance
0.30
MS2393
Unit
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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