MS2362 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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MS2362
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• DESIGNED FOR HIGH POWER PULSED IFF, DME, AND
TACAN APPLICATIONS
• 80 W (typ.) IFF 1030 – 1090 MHz
• 75 W (min.) DME 1025 – 1150 MHz
• 50 W (typ.) TACAN 960 – 1215 MHz
• 1025 - 1150 MHz
• GOLD METALLIZATION
• P_OUT = 75 WATTS
• G_P = 7.5 dB MINIMUM
• INTERNAL INPUT MATCHING
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2362 is a gold metallized silicon, NPN power transistor
designed for applications requiring high peak power and low duty cycles such as IFF, DME,
and TACAN. The MS2362 utilizes internal impedance matching for improved broadband
performance and low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CES
V_EBO
I_C
P_DISS
T_J
T_STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
65
65
3.5
5.5
218.7
200
-65 to +150
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Unit
V
V
V
A
W
°C
°C