MS2361 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
MS2361
Features
• DESIGNED FOR HIGH POWER PULSED IFF, DME,
TACAN, APPLICATIONS
• 80 WATTS (typ.) IFF 1030 – 1090 MHz
• 75 WATTS (min.) DME 1025 – 1150 MHz
• 50 WATTS (typ.) TACAN 960 – 1215 MHz
• 7.6 dB MIN. GAIN
• REFRACTORY GOLD METALLIZATION
• EMITTER BALLASTING AND LOW THERMAL
RESISTANCE FOR RELIABILITY AND RUGGEDNESS
• INFINITE LOAD VSWR CAPABILITY AT SPECIFIED
OPERATING CONDITIONS
• INPUT MATCHED, COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2361 is a gold metallized silicon, NPN power transistor
designed for applications requiring high peak power and low duty
cycles such as IFF, DME and TACAN. The MS2361 is packaged in
the 0.280” input matched stripline package resulting in improved
broadband performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
V_CES
V_EBO
I_C
P_DISS
T_J
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
Value
65
65
3.5
5.5
218.7
+200
-65 to +150
0.8
Unit
V
V
V
A
W
°C
°C
° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.