MS2341 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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MS2341
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• DESIGNED FOR HIGH POWER PULSED IFF, DME, AND
TACAN APPLICATIONS
• 40 W (typ.) IFF 1030–1090 MHz
• 35 W (min.) DME 1025–1150 MHz
• 25 W (typ.) TACAN 960–1215 MHz
• 960 - 1215 MHz
• GOLD METALLIZATION
• Pout = 25 W MINIMUM
• Gp = 9.0 dB
• INTERNAL INPUT MATCHING
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2341 is a gold metallized silicon, NPN power transistor
designed for applications requiring high peak power and low duty
cycles such as IFF, DME, and TACAN. The MS2341 utilizes internal
impedance matching for improved broadband performance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
V_CES
V_EBO
I_C
P_DISS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
T_J
Junction Temperature
T_STG
Storage Temperature
Value
65
65
3.5
2.6
87.5
200
-65 to +150
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
2.0
Unit
V
V
V
A
W
ºC
ºC
° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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