MS2322 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• 1025 - 1150 MHz
• 50 VOLT OPERATION
• P_OUT = 15 WATTS
• G_P = 10 dB MINIMUM
• 20:1 VSWR CAPABILITY @ RATED CONDITIONS
• COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2322 is a gold metallized, silicon NPN power transistor
designed for pulsed applications with low duty cycles such as
IFF, DME and TACAN. Internal impedance matching is utilized
for maximum broadband performance and simplified external
matching.
MS2322
.280 4LSL (M115)
Epoxy Sealed
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CES
V_EBO
I_C
P_DISS
T_J
T_STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
Value
65
65
3.5
1.5
87.5
+200
-65 to +150
2.0
Unit
V
V
V
A
W
°C
°C
° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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